Electrical Characterization of High-K Dielectric Gates for Microelectronic Devices
نویسندگان
چکیده
منابع مشابه
Conductive Atomic Force Microscopy for Characterization of High-k Dielectrics
The thickness decrease of the SiO2 used as the gate oxide of MOS devices has become one of the main showstoppers of the microelectronic scaling down process, due to a dramatic increase of leakage currents and a decrease in lifetime[1]. The use of an alternative material with a higher dielectric constant (high-K) has been proposed to replace SiO2 as the gate dielectric, because High-K materials ...
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While the application of optical and photonic technologies in the communications, computing, medicine and industrial manufacturing has been growing rapidly, the miniaturization of these technologies has been slow due to the limitation on the diffraction. However, the developments of nanoscale components and guiding methods are continuing with a rapid pace. Since waveguiding is a fundamental iss...
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تاریخ انتشار 2017